| Summary: In this study, using the Solid State Reaction Method was doped SiC rates of 5%,10% and 20% in MgB2 superconductor, pure and SiC-doped samples were produced by four. In order to obtain a homogeneous structure the samples were subjected to heat treatment twice under pressure of 8bar Ar gas. In addition, the internal stress that may occur in samples to prevent and adequately crystallization to form the cooling process after heat treatment as performed at low speed. Structural and magnetic properties of these samples produced were peerformed with XRD analysis, density measurement apparatus, scanning electron microscopy and PPMS system.
The results of measuring the critical current density increase in the SiC-doped MgB2, was caused by a slight decline in the value of the critical temperature. Doping was realized that the best contribution rate of 5% SiC.
Key words: MgB2, SiC-Doped MgB2, Critical Current Density. |
