Ph.D. Tezi Görüntüleme

Student:	İmran KANMAZ
Supervisor:	Asst. Prof. Dr. Abdullah ÜZÜM
Department:	Yenilenebilir Enerji Kaynakları/Teknolojileri
Institution:	Graduate School of Natural and Applied Sciences
University:	Karadeniz Technical University Turkey

Title of the Thesis:	DEVELOPMENT OF ANTI-REFLECTIVE AND PASSIATION LAYERS BASED ON HAFNIUM OXIDE (HfO2) FOR CRYSTALLINE SILICON SOLAR CELL APPLICATIONS
Level:	Ph.D.
Acceptance Date:	5/8/2021
Number of Pages:	114
Registration Number:	Di1449

Summary:

In this study, Hafnium oxide (HfO2) based thin films were produced by using spin-coating method and then their antireflection behavior and passivation effects were

investigated. First, samples were annealed at 500 ºC-1000 ºC temperature range in order to

observe the effect of annealing temperature on coating of hafnium oxide on c-Si. According

to XRD results, it was observed that the samples annealed at temperature above 500 ºC were

71.3 nm thick HfO2 thin film as a result of reflection measurements. Furthermore, from

ellipsometer measurements it was clearly observed that samples have 1.934 refractive index

at 600 nm wavelength and refractive index increased to 2.05 by increasing annealing

double layered and HfO2-SiO2 mixture thin films. HfO2-SiO2(1:1) thin films were produced

and their antireflective and passivation effects were investigated. Minimum and average

reflection values of HfO2-SiO2(1:1) thin films were obtained as 4.30% and 14.68%,

increased to 32 µs compared to un-coated silicon effective carrier lifetime which is 2 µs. For

higher annealing temperatures, it has been seen that the effective carrier lifetime decreases

dramatically (for annealing temperatures of 700ºC and 800ºC, effective carrier lifetime

experimental reflection values as anti-reflection coating (ARC) by using Afors-Het software

to c-Si gelar cells, power conversion efficiencies (PCE) of solar cell without anti-reflection

coating and high molarity (0.4M) HfO2 coated solar cell were determined as 11.68% and

17.58%, respectively. As a result of increments in the short circuit current density (Jsc) from

20.87 mA/cm2 to 31.27 mA/cm2 and in open circiut voltage (Voc) from 685.10 mV to 696.10 mV, 6% efficiency increase obtained for high molarity HfO2 thin film coated solar cell.